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| Power Transistors 2SB942, 2SB942A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267 and 2SD1267A Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q 7.50.2 Solder Dip 4.0 14.00.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB942 2SB942A 2SB942 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25C) Ratings -60 -80 -60 -80 -5 -8 -4 40 2 150 -55 to +150 Unit V emitter voltage 2SB942A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C 16.70.3 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB942 2SB942A 2SB942 2SB942A 2SB942 2SB942A (TC=25C) Symbol ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf IC = -4A, IB1 = - 0.4A, IB2 = 0.4A Conditions VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VCE = -30V, IB = 0 VCE = -60V, IB = 0 VEB = -5V, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -3A VCE = -4V, IC = -3A IC = -4A, IB = - 0.4A VCE = -10V, IC = - 0.1A, f = 10MHz 30 0.2 0.5 0.2 -60 -80 70 15 -2 -1.5 V V MHz s s s 250 min typ max -400 -400 -700 -700 -1 Unit A A mA V Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q 70 to 150 P 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE1 = 70 to 250) in the rank classification. Rank hFE1 1 Power Transistors PC -- Ta 50 -6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) IB=-120mA -5 TC=25C 2SB942, 2SB942A IC -- VCE -10 VCE=-4V IC -- VBE Collector power dissipation PC (W) -100mA -80mA Collector current IC (A) -4 Collector current IC (A) 40 -8 30 -60mA -6 25C TC=100C -25C -3 (1) 20 -40mA -20mA -10mA -4 -2 10 (3) (4) 0 0 20 40 60 (2) -1 -8mA -5mA -2 0 80 100 120 140 160 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=10 -30 -10 -3 -1 25C TC=100C -25C 10000 hFE -- IC 10000 VCE=-4V 3000 1000 300 100 30 10 3 fT -- IC VCE=-5V f=10MHz TC=25C Forward current transfer ratio hFE 1000 25C 300 100 30 10 3 1 - 0.01 - 0.03 - 0.1 - 0.3 TC=100C -25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 Transition frequency fT (MHz) -1 -3 -10 3000 -1 -3 -10 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) -100 -30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth(t) (C/W) Collector current IC (A) 102 -10 -3 -1 ICP IC t=1ms 10ms DC 10 (2) - 0.3 - 0.1 - 0.03 - 0.01 -1 1 2SB942A 10-1 2SB942 -3 -10 -30 -100 -300 -1000 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 |
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